Erratum: “Doping efficienty, dopant location and oxidation of Si nanocrystals” [Appl. Phys. Lett. 92, 123102 (2008)]
نویسندگان
چکیده
منابع مشابه
Critical Role of Dopant Location for P-Doped Si Nanocrystals
The doping of phosphorus (P) provides an additional means to control the optical properties of silicon nanocrystals (Si NCs). The P-doping-induced changes in the optical properties of Si NCs, however, have not been consistently understood. On the basis of first-principles calculations, we explain the P-doping-induced infrared absorption of Si NCs and the effect of P-doping on the light emission...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2954009